Evaluation of Hot Carrier Impact on Lateral-DMOS with LOCOS feature
DOI:
https://doi.org/10.51485/ajss.v6i1.2Keywords:
LDMOS, Hot Carrier Stress, LOCOS, Flicker noiseAbstract
Hot carrier stress is evaluated on a laterally diffused MOSFET (LDMOS) by TCAD simulation. The device under test is obtained from process simulation under a 1µm CMOS flow available at CDTA. The n-type transistor uses the LOCOS (local oxidation of silicon) and single RESURF (reduced surface field) features. Using the trap degradation model, degradation over time and different biases, the shift of threshold voltage VTH, ON-state resistance RON, saturation current IDsat, and device lifetime are extracted. The shifts were found to be manageable, they have a single process mechanism and are due to hot electrons in our case. But, flicker noise assessment under the same stress shows noticeable instabilities.
Downloads
Downloads
Published
How to Cite
Issue
Section
License
Copyright (c) 2021 Ali HOUADEF, Boualem DJEZZAR
This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.