Impact of NBTI Stress on VDMOSFET Regions

Abstract

In this paper, we investigate the impact of negative bias temperature instability (NBTI) degradation on both channel and drain regions, of commercial power double diffused MOS transistor (VDMOSFET), using capacitance-voltage method (C-V). We report that the degradation is important at channel (drain) region in p-channel VDMOSFET (n-channel VDMOSFET). That means that the phosphorus doped region (n-type) is more sensitive to NBTI stress.