Impact of NBTI Stress on VDMOSFET Regions
DOI:
https://doi.org/10.51485/ajss.v3i2.60Keywords:
VDMOSFET regions, C-V, NBTIAbstract
In this paper, we investigate the impact of negative bias temperature instability (NBTI) degradation on both channel and drain regions, of commercial power double diffused MOS transistor (VDMOSFET), using capacitance-voltage method (C-V). We report that the degradation is important at channel (drain) region in p-channel VDMOSFET (n-channel VDMOSFET). That means that the phosphorus doped region (n-type) is more sensitive to NBTI stress.
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Published
2018-06-15
How to Cite
[1]
Merah, S.M. and Nadji, B. 2018. Impact of NBTI Stress on VDMOSFET Regions. Algerian Journal of Signals and Systems . 3, 2 (Jun. 2018), 65-69. DOI:https://doi.org/10.51485/ajss.v3i2.60.
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Copyright (c) 2018 Sidi Mohammed Merah, Bouchra Nadji
This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.